A dual band passive RFID design in 0.18µm CMOS technology

摘要

This paper presents a novel fully integrated passive X-band RFID transponder, implemented in IBM 0.18-µm RF CMOS technology. The tag was designed to keep the current dissipation in the whole system to a minimum, with special emphasis on RF-DC rectifier and the voltage sensor. Interaction between the building blocks of the RFID tag was investigated and the key design issues addressed in this paper include the design of low-power RFID building blocks. The simulation results demonstrated that the proposed low-power RFID transponder can properly operate under very low input power as well as complying with the universal RFID communication standard.