Single crystalline substrates for III- V growth via exfoliation of bulk single crystals

摘要

single crystals were grown via the Bridgman technique in order to demonstrate our exfoliation method. From a centimeter diameter single crystal, up to eleven substrates with RMS roughness of 0.04 nm in a 20x20 micron region were exfoliated using this method. Large area AFM scans determined a terrace length of 72 μm between step edges. Thicknesses were determined to range from 40-160 μm using cross-sectional SEM. This exfoliation technique opens the door to the widespread study of layered materials as epitaxial substrates.