The gettering effect of dielectric films for silicon solar cells

摘要

We present our recent findings on the strong gettering effect of dielectric films for removing impurities from the silicon bulk. Iron was used as a model impurity in silicon to study the gettering effects. The iron concentration in silicon is found to be significantly reduced after annealing silicon wafers coated with either plasma-enhanced chemical vapour deposited (PECVD) silicon nitride (SiN