Hydrogen Plasma Post-Deposition Treatment for Passivation of a-Si/c-Si Interface for Heterojunction Solar Cell by Correlating Optical Emission Spectroscopy and Minority Carrier Lifetime

摘要

Excellent passivation at the a-Si:H/ c-Si interface is required for high efficiency heterojunction solar cells. Hydrogen plasma treatment after the a-Si deposition has been considered as an effective and manufacturable method to saturate the surface dangling bonds. In this paper the correlation between H