Optical properties of Ge1−zSnz/ SixGe1−x−ySny heterostructures

摘要

Simulations of optical gain show very promising results, but direct photoluminescence (PL) of this heterostructure has not been previously demonstrated. In our group, we have obtained high-quality single GeSn and SiGeSn layers by low-temperature MBE growth and characterized their structural and optical properties