Voltage-gated skyrmion transistor

摘要

Magnetic chiral skyrmions are localized topological field configurations, which are stabilized by Dzyaloshinskii-Moriya interaction and/or magnetostatic dipolar coupling in magnetic nanostructures. To realize and eventually commercialize skymionics, various challenges need to be solved such as creating and annihilation of skyrmions, conversion of skyrmions with different helicity and vorticity, efficient transmission and read-out of skyrmions, etc. This work addressed the critical problem of voltage control of magnetic skyrmion, in which the perpendicular magnetic anisotropy (PMA) in the gate region is locally controlled by an applied electric field due to the charge accumulations. With the configuration of applying a gate voltage in the center region of a magnetic nanotrack, two prototypes of transistors have been investigated: skyrmion driven by spin current and skyrmion driven by spin wave.