Influence of different buffers on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

摘要

Magnetic Tunnel Junctions (MTJs) with Perpendicular Magnetic Anisotropy (PMA) have recently brought a significant attention in view of application as high-density non-volatile Magnetic Random Access Memory (MRAM) due to their possible low critical current density, good thermal stability and downscalable junction size [1]. As the PMA can be affected by the MTJ layer structure, these properties can also be modified significantly, creating an opportunity for further improvement of the magnetic memory technology based on MTJs.