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Magnetic Tunnel Junction Device Having Amorphous Buffer Layers That Are Magnetically Connected Together And That Have Perpendicular Magnetic Anisotropy
Magnetic Tunnel Junction Device Having Amorphous Buffer Layers That Are Magnetically Connected Together And That Have Perpendicular Magnetic Anisotropy
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机译:具有非晶缓冲层的磁隧道结器件,该非晶缓冲层被磁性连接在一起并且具有垂直的磁各向异性
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摘要
According to a first embodiment of the present invention, a magnetic tunnel junction device comprises: a free layer having a magnetization in a variable direction; a pinned layer having a magnetization in a pinned direction; and a tunnel insulation film formed between the free layer and the pinned layer, wherein the pinned layer includes a ferromagnetic film and an amorphous metal film. In addition, a magnetic device according to a second embodiment of the present invention comprises: an amorphous or nanocrystal material layer; and a perpendicular magnetic anisotropic material layer formed on the amorphous or nanocrystal material layer. The amorphous or nanocrystal material layer is a predefined amorphous material or nanocrystal material layer serving as a lower layer, and the perpendicular magnetic anisotropic material layer is formed on the amorphous or nanocrystal material layer.
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