Effect of Mn impurities on the 3-terminal Hanle signals in ferromagnet/oxide tunnel contacts on a semiconductor

摘要

The origin of electrical spin signals observed in ferromagnet/insulator/semiconductor (FM/I/SC) junctions has been the subject of heated debates in recent years . Experimental data obtained by many research groups using the three-terminal configuration are orders of magnitude larger than predicted by the theory of spin injection, accumulation and diffusion. Nonetheless, the spin signals, which are obtained from Hanle measurements, show all the characteristic features of precession of an induced non-equilibrium spin population indicating that intriguing and yet unknown physics is at play.