FERROMAGNETIC OXIDE SEMICONDUCTOR THIN FILM, ITS PRODUCTION METHOD, AND SPIN TUNNEL MAGNETORESISTIVE ELEMENT USING THIS

摘要

PROBLEM TO BE SOLVED: To control the conductivity of an ilmenite-hematite solid solution orderly phase thin film provided with both properties of a magnetic material and a semiconductor.;SOLUTION: This ferromagnetic oxide semiconductor thin film is an ilmenite-hematite solid solution orderly phase thin film, grown in c-axis orientation on a single crystal substrate by a pulse-laser deposition process, and characterized in that the compositional formula is expressed by {xFeTiO₃-(1-x)Fe₂O₃}, where x represents a composition ratio of ilmenite FeTiO₃ to the total composition and takes a value between zero and one. The ferromagnetic oxide semiconductor thin film of the present invention has desired conductivity and is composed of a c-axially oriented ilmenite-hematite solid solution orderly phase thin film. The thin film produced by the method associated with the invention is highly oriented in the c-axis direction and has qualities comparable to those of a single crystal.;COPYRIGHT: (C)2007,JPO&INPIT