Flexible Electronics Laboratory, University of Sussex, Brighton, BN1 9QT, UK;
Flexible Electronics Laboratory, University of Sussex, Brighton, BN1 9QT, UK;
Faculty of Science and Technology, Free University of Bozen-Bolzano, Bozen, 39100, Italy;
Faculty of Science and Technology, Free University of Bozen-Bolzano, Bozen, 39100, Italy;
Chair of Circuit Design and Network Theory, TU Dresden, Dresden, 01069, Germany;
Chair of Circuit Design and Network Theory, TU Dresden, Dresden, 01069, Germany;
Chair of Circuit Design and Network Theory, TU Dresden, Dresden, 01069, Germany;
Chair of Circuit Design and Network Theory, TU Dresden, Dresden, 01069, Germany;
Thin film transistors; Strain; Integrated circuit modeling; Substrates; Mathematical model; Voltage measurement; Logic gates;
机译:机械弯曲对基于InGaZnO的柔性铁电存储TFT的影响
机译:柔性IGZO TFT SPICE模型和可弯曲有源矩阵阵列的有源应变补偿电路设计
机译:基于电路仿真的多目标进化算法在多级时钟驱动下优化a-Si:H TFT栅极驱动器电路
机译:基于短通道InGazno TFTS的可弯曲高频电路设计
机译:规模化CMOS中基于子电路单元的高频模拟集成电路设计
机译:偏置应力和温度对InGaZnO TFT和电路的影响
机译:基于平面电路模型和严格等效网络的双斜直角弯曲分析与设计