GaN technologies for applications from L- to Ka-band

摘要

A set of GaN technologies are presented including a revised 0.25μm GaN HEMT technology in WIN Semiconductors' NP25 platform. The new improvements to the NP25 GaN HEMT were realized by the optimizing device layout, the fabrication process and the epitaxy enabling improved performance while still maintaining highly reliable operation for X-band applications. Pulse I-V shows low gatelag and drain-lag ratio of 16% and 6%, respectively. The maximum power-added efficiency (PAE) could be improved from 59.6% to 64.7% at 10GHz. The 0.45μm GaN HEMT technology for L-, C-, and S-band applications has 60.5 % PAE at 2.7 GHz. The 0.15μm GaN HEMT technology for Ka-band applications has PAE 39.6% and power density up to 5.4W/mm.