Effects of Gallium Nitride (GaN) Cascode FETs on the Efficiency of an Interleaved DC-DC Converter

摘要

Increasing global demand for renewable energy systems is necessitating the application of high-efficiency power conversion. Wide-band gap (WBG) semiconductor devices such as gallium nitride (GaN) are increasing semiconductor switching performance and exceeding the limitations of current silicon (Si) devices. This paper presents a performance comparison between GaN cascode FET and Si CoolMOS power devices in an interleaved dc-dc boost converter. Switching characteristics and energy losses are measured through a double-pulse test (DPT) and analyzed at various voltages and junction temperatures. The effects of integrating GaN power devices in the converter are examined at higher switching frequencies and output power levels. The resulting total power loss and overall efficiency of the two converters are compared. The GaN power device in the converter offers better performance, lower switching loss, and more energy efficiency than the conventional interleaved boost converter with Si devices.