A novel approach to analyze self-heating effect in MOSFET transistors

摘要

In this paper is presented characterization and modeling of the self-heating effect (SHE) for multifinger MOSFET transistors. The mechanism of self heating effect has been analyzed based on simulator which supporting 2D device model. By using Verilog-A language a new model is developed for BSIM6 model which considers SHE effects as well. By using a vector network analyzer an AC conductance method is developed to obtain Ids-Vds measurement without increasing temperatures for extracting thermal resistance and capacitance. Almost the same results have been obtained between the measurements and simulations by using the newly developed model. Since in original BSIM6 models the SHE is not really considered that is why it is showing inconsistency between large and small signal analysis.