Cryogenic Operational Amplifier on Complementary JFETs

摘要

Features of the design of operational amplifiers (Op-Amp) on complementary field effect transistors with p-n- junction (junction field-effect transistor, JFET) for operation under the influence of penetrating radiation (PR) and extremely low temperatures up to -197°C are considered. The original circuit of the Op-Amp and the results of its circuit simulation are given.