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Current Status of Terahertz Integrated Circuits - From Components to Systems

机译:太赫兹集成电路的当前状态-从组件到系统

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Despite its several applications, terahertz (THz) radiation has posed a particular challenge for hardware design. Several expensive and bulky laser or III-V semiconductor based solutions have been employed for THz systems. However, over the last decade, there has been a tremendous research into the design of THz integrated circuits in commercial silicon CMOS and SiGe HBT BiCMOS process technologies. Silicon based systems primarily benefit from the mixed signal integration capabilities of the technology, which enable a new set of possibilities and applications in the THz domain. In this paper, we review the current status of THz integrated circuits. We discuss trends in silicon based THz sources and receivers, as well as different THz on-chip systems that have been reported so far for different application areas.
机译:尽管有几种应用,太赫兹(THz)辐射对硬件设计提出了特殊的挑战。几种昂贵且笨重的基于激光或III-V半导体的解决方案已用于THz系统。然而,在过去的十年中,对商用硅CMOS和SiGe HBT BiCMOS工艺技术中的THz集成电路的设计进行了大量研究。基于硅的系统主要受益于该技术的混合信号集成功能,从而在THz域中实现了一系列新的可能性和应用。在本文中,我们回顾了太赫兹集成电路的当前状态。我们讨论了基于硅的太赫兹源和接收器以及迄今为止针对不同应用领域报道的不同太赫兹片上系统的趋势。

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