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Leak-Proof Packaging for GaN Chip with Controlled Thermal Spreading and Transients

机译:具有受控热扩散和瞬态的GaN芯片防漏封装

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Plastic mold packaging is proposed as the first solution to make leak proof joinability between the heat spreader and plastic mold by optimization of micro-textures on the spreader. No leaks were detected after gross-leak testing. Vertically-aligned graphitic substrate (VGS) provided the second solution to control thermal spreading and transients from GaN to the spreader. A Copper-laminated VGS with stacking graphene planes in Y and Z-axes significantly reduced the channel temperature and Thermal resistance (Rth) by 40 K and 0.28 K/W than those in Cu-based composite substrate (CCS) even for the same spreader thickness of 1 mm. Since thermal diffusivity for VGS is ten times faster than CCS., temperature difference during ON/OFF intervals was reduced by 18 K between Cu-laminated VGS-packaged and CCS-packaged GaN HEMTs. The time constant of Cu-laminated VGS-packaged GaN HEMT was 2.5 ms, much longer than 0.2 ms.
机译:提出将塑料模具包装作为通过优化散热器上的微结构来提高散热器和塑料模具之间防漏连接性的第一种解决方案。大泄漏测试后未发现泄漏。垂直排列的石墨衬底(VGS)提供了第二种解决方案,以控制热扩散和从GaN到扩散器的瞬变。在Y和Z轴上具有堆叠石墨烯平面的铜层压VGS,即使对于相同的散布器,其通道温度和热阻(Rth)也比Cu基复合衬底(CCS)显着降低了40 K和0.28 K / W。厚度为1毫米。由于VGS的热扩散率比CCS快十倍,因此在开/关间隔内的铜层压VGS封装和CCS封装的GaN HEMT之间的温差降低了18K。铜层压的VGS封装的GaN HEMT的时间常数为2.5毫秒,远大于0.2毫秒。

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