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Theoretical Study of O2 Molecular Adsorption and Dissociation on Silicon Carbide Nanotubes

机译:碳化硅纳米管上O2分子吸附和解离的理论研究

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The adsorption/dissociation of the O2 molecule on the surface of silicon carbide nanotubes (SiCNTs) was investigated by density functional theory. We found several adsorption configurations, including chemisorption and cycloaddition configurations, for triplet and singlet O2. Unlike the case for carbon nanotubes, the chemisorption of triplet O2 on SiCNTs is exothermic with remarkable charge transfer from nanotubes to the O2 molecule. Singlet O2 adsorption on the surface of SiCNTs can yield cycloaddition structures with large binding energies and sizable charge transfer. The reaction mechanism studies show that for triplet O2, the chemisorption configuration is favorable, but the cycloaddition configuration is preferred for singlet O2. For singlet O2, we also studied the dissociation of the O2 molecule, and a two-step mechanism was presented. The dissociation of molecular O2 results in formation of two threemembered rings with large binding energies. The key to the dissociation process of singlet O2 on the SiCNT surface is the first step with a barrier energy of 0.40 eV. Finally, the electronic properties of SiCNTs with adsorbed triplet and singlet O2 are shown to be dramatically influenced.
机译:通过密度泛函理论研究了O2分子在碳化硅纳米管(SiCNTs)表面的吸附/解离。我们发现了三重态和单重态O2的几种吸附构型,包括化学吸附和环加成构型。与碳纳米管的情况不同,三重态O2在SiCNTs上的化学吸附是放热的,电荷从纳米管转移到O2分子。单线态O2在SiCNTs表面的吸附可以产生具有大结合能和可观电荷转移的环加成结构。反应机理研究表明,对于三重态O2,化学吸附构型是有利的,但对于单重态O2,环加成构型是优选的。对于单线态O2,我们还研究了O2分子的解离,并提出了两步机理。分子O2的解离导致形成两个具有大结合能的三元环。单线态O2在SiCNT表面解离过程的关键是第一步,势垒能量为0.40 eV。最后,吸附三重态和单重态O2的SiCNTs的电子性能受到显着影响。

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