High-density and high-leadcount chip on tape (COT) technology isemerging as an attractive component for high-performance multichipmodule applications. A hermetic sealed semiconductor die with gold bumpterminations over SiO2 and Si3N4passivations was bonded to a gold-plated copper tape, using a thermalcompression gang bonding technique. The device was subsequentlyencapsulated and marked. The authors first review the bump design rules,bump characteristics, and the inner lead bond process. The reliabilitytest results of COT devices are presented
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