High-performance AlGaAs/GaAs HBT IC technology

摘要

Abstract: A high-performance AlGaAs/GaAs HBTIC technology capable of 45 GHz f$-T$/ and f$- max$/ is described. The process is mesa isolated and does not use any ion-implantation steps. This simple non-self-aligned process integrates 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. An HBT divide-by-eight prescaler circuit clocks at 13.5 GHz. A pulser circuit using the fast Schottky diodes produced a voltage pulse having 10.35 ps rise time.!11