Extending the Wavelength Range of Single Emitter Diode Lasers for Medical and Sensing Applications: 12xx-nm quantum dots, 2000-nm wells, ＞ 5000-nm cascade lasers

摘要

Diode lasers supply high power densities at wavelengths from 635-nm to 2000-nm, with different applications enabled by providing this power at different wavelengths. As the range of available wavelengths broadens, many novel medical and atmospheric applications are enabled. Traditional quantum well lasers provide high performance in the range 635-nm to 1100-nm range for GaAs-based devices and 1280-nm to 2000-nm for InP, leaving a notable gaps from 1100 to 1280-nm, and above 1500-nm. There are many important medical and sensing applications in the 12xx-nm range and quantum dots produced using Stranski-Krastanow self-organized MBE growth on GaAs substrates provide an alternative high performance solution. We present results confirming broad area quantum dot lasers can deliver high optical powers of 16-W per emitter and high power conversion efficiency of 35% in this wavelength range. In addition, there are growing applications for high power sources in wavelengths ＞ 1500-nm. We present a brief review of our current performance status in this wavelength range, both with conventional quantum wells in the 1500-nm to 2500-nm range and MOCVD grown quantum cascade lasers for wavelengths ＞ 4000-nm. At each wavelength, we review the designs that deliver this performance, prospects for increased performance and the potential for further broadening the availability of novel wavelengths for high power applications.