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Degradation analysis of individual emitters in 808nm QCW laser diode array for space applications

机译：太空应用中808nm QCW激光二极管阵列中单个发射极的降解分析

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Degradation analysis of 808nm QCW laser diode array for space application has been investigated by using individual emitter characterization technique. We found that homogeneity of electro-optical characteristics at emitter level along the bar is a relevant parameter to ensure the reliability of the bars. This work is focused on the importance of individual emitter characterization and aging test results analysis up to 4.47 Gshots.

机译：通过使用单独的发射极表征技术，研究了用于空间应用的808nm QCW激光二极管阵列的降解分析。我们发现，沿着条形在发射器级的电光特性的均匀性是确保条形可靠性的一个相关参数。这项工作着重于对单个发射极进行表征以及对高达4.47 Gshots的老化测试结果进行分析的重要性。

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《High-power diode laser technology and applications VIII 》|2010年|P.758314.1-758314.9|共9页
会议地点 San Francisco CA(US)
作者
Othman Rehioui; rnLaurent Bechou; rnThierry Fillardet; rnAndreas Kohl; rnYves Ousten; rnGerard Volluet;
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作者单位

IMS-Labs, Dept. COFI, Bordeaux 1 University, 351 Cours de la Liberation, 33405 Talence, France Quantel Laser Diodes, 2 bis Avenue du Pacifique, 91941 Les Ulis, France;

rnIMS-Labs, Dept. COFI, Bordeaux 1 University, 351 Cours de la Liberation, 33405 Talence, France;

rnQuantel Laser Diodes, 2 bis Avenue du Pacifique, 91941 Les Ulis, France;

rnQuantel Laser Diodes, 2 bis Avenue du Pacifique, 91941 Les Ulis, France;

rnIMS-Labs, Dept. COFI, Bordeaux 1 University, 351 Cours de la Liberation, 33405 Talence, France;

Quantel Laser Diodes, 2 bis Avenue du Pacifique, 91941 Les Ulis, France;

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原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术 ;
关键词
laser diode array; laser diode bars; individual emitter characterization; degree of polarization; degradation analysis;

机译：激光二极管阵列；激光二极管条；单独的发射极表征；极化度退化分析;

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1. 1000 W QCW output power from surface emitting GaAs/AlGaAs laser diode arrays [J] . Groussin B., Pitard F. Electronics Letters . 1993 ,第4期

机译：表面发射GaAs / AlGaAs激光二极管阵列的1000 W QCW输出功率
2. Vertical-cavity surface emitting laser-diodes arrays expanding the range of high-power laser systems and applications [J] . Pruijmboom Armand, Apetz Rolf, Conrads Ralf, Journal of Laser Applications . 2016 ,第3期

机译：垂直腔表面发射激光二极管阵列，扩大了高功率激光系统和应用范围
3. Design limitations of highly parallel free-space optical interconnects based on arrays of vertical cavity surface-emitting laser diodes, microlenses, and photodetectors [J] . Suning Tang, Chen R.T. Journal of Lightwave Technology . 1994 ,第11期

机译：基于垂直腔表面发射激光二极管，微透镜和光电探测器阵列的高度并行自由空间光学互连的设计局限性
4. Degradation analysis of individual emitters in 808nm QCW laser diode array for space applications [C] . Othman Rehioui, Laurent Bechou, Thierry Fillardet, SPIE Conference on High-power Diode Laser Technology and Applications . 2010

机译：用于空间应用的808nm QCW激光二极管阵列中各个发射器的劣化分析
5. Analysis of Light Emitting Diode Technology for Aerospace Suitability in Human Space Flight Applications. [D] . Treichel, Todd H. 2015

机译：分析发光二极管技术在人类太空飞行应用中的航空航天适应性。
6. Processes for design construction and utilisation of arrays of light-emitting diodes and light-emitting diode-coupled optical fibres for multi-site brain light delivery [O] . Jacob G. Bernstein, Brian D. Allen, Alexander A. Guerra, -1

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7. Characterisation, emulation and by-emitter degradation analysis of high power semiconductor laser diodes [O] . Amuzuvi Christian Kwaku 100

机译：高功率半导体激光二极管的表征，仿真和发射极劣化分析

Degradation analysis of individual emitters in 808nm QCW laser diode array for space applications

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