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High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials

机译:用于FACTS的高功率半导体器件:最新技术和先进材料的机会

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摘要

Flexible AC Transmission Systems (FACTS) use advanced power electronics to minimize reactive power loss on the grid. Power devices used in FACTS systems must be capable of switching several thousand amps at voltages of 1-10 kV. Traditionally, these systems have relied on silicon thyristors, but recently have also began to incorporate insulated gate bipolar transistors. FACTS systems present an opportunity for emerging SiC and GaN power transistors, which offer major efficiency gains. However, for these advanced materials to be considered for use in high consequence grid level systems like FACTS controllers, excellent reliability must be demonstrated.
机译:灵活的交流输电系统(FACTS)使用先进的电力电子设备来最大程度地减少电网上的无功功率损耗。 FACTS系统中使用的功率设备必须能够在1-10 kV的电压下开关几千安培。传统上,这些系统依靠硅晶闸管,但最近也开始合并绝缘栅双极型晶体管。 FACTS系统为新兴的SiC和GaN功率晶体管提供了机会,这些晶体管可显着提高效率。但是,要考虑将这些先进的材料用于FACTS控制器等高结果网格级别的系统,必须证明其出色的可靠性。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    Sandia National Laboratories PO Box 5800, MS 1084, Albuquerque, NM 87185;

    Sandia National Laboratories PO Box 5800, MS 1084, Albuquerque, NM 87185;

    Sandia National Laboratories PO Box 5800, MS 1084, Albuquerque, NM 87185;

    Sandia National Laboratories PO Box 5800, MS 1084, Albuquerque, NM 87185;

    Sandia National Laboratories PO Box 5800, MS 1084, Albuquerque, NM 87185;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
  • 关键词

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