首页> 外国专利> current detector circuit for a power semiconductor device, in particular an integrated power semiconductor switches, particularly for use in motor vehicles.

current detector circuit for a power semiconductor device, in particular an integrated power semiconductor switches, particularly for use in motor vehicles.

机译:用于功率半导体器件,特别是集成功率半导体开关的电流检测器电路,特别是用于机动车辆的电流检测器电路。

摘要

The invention relates to a circuit for measuring the current through a power transistor, which is built up of at least two groups of parallel-switched base transistors. A first large group of transistors carries the power current and the second group carries a current to be measured which is proportional to the power current when the base emitter voltage or the gate-source voltage (in the case of bipolar or field effect transistors) of all the transistors in the groups is the same. The voltage difference between the parallel-switched emitters or sources of the two groups is measured by means of a differential amplifier and the emitter or source voltage of the first group is impressed on the emitters or sources of the second group with a control transistor driven by the differential amplifier. Except in extreme cases (for example, a short-circuit) the current to be measured through the second group follows the power current through the first group on a proportional basis.
机译:用于测量通过功率晶体管的电流的电路技术领域本发明涉及一种用于测量通过功率晶体管的电流的电路,该电路由至少两组并联开关的基极晶体管构成。当晶体管的基极发射极电压或栅极-源极电压(在双极或场效应晶体管的情况下)时,第一组晶体管承载功率电流,第二组晶体管承载功率,该电流与功率电流成比例组中的所有晶体管都相同。两组的并联开关的发射极或源极之间的电压差通过差分放大器测量,第一组的发射极或源极电压由控制晶体管驱动的第二个发射极或源极施加在第二组的发射极或源极上。差分放大器。除极端情况(例如,短路)外,要通过第二组测量的电流按比例跟随通过第一组的功率电流。

著录项

  • 公开/公告号DE3685733T2

    专利类型

  • 公开/公告日1993-01-14

    原文格式PDF

  • 申请/专利权人 PHILIPS NV NL;

    申请/专利号DE19863685733T

  • 发明设计人 KORTELING AART GERRIT NL;

    申请日1986-11-28

  • 分类号G01R19/15;G01R19/165;

  • 国家 DE

  • 入库时间 2022-08-22 05:02:23

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