Department of Electronic and Electrical Engineering, University of Bath, U.K., BA2 7AY;
Department of Physics, SUPA, University of Strathclyde, Glasgow, U.K., G4 0NG;
Department of Electronic and Electrical Engineering, University of Bath, U.K., BA2 7AY;
Department of Electronic and Electrical Engineering, University of Bath, U.K., BA2 7AY;
Department of Physics, SUPA, University of Strathclyde, Glasgow, U.K., G4 0NG;
Department of Electronic and Electrical Engineering, University of Bath, U.K., BA2 7AY;
core-shell; InGaN; m-plane; non-polar; cathodoluminescence; nanowires;
机译:核壳发光二极管的氮化铟镓刻面非极性生长速率和组成的研究
机译:通过研究多面Au-Cu2O和双金属核壳纳米晶体揭示了取决于面的光学性质
机译:了解GaN / Ingan Core-Shell Grang对高质量因素的高质量因素潜水廊,来自GaN棒上的非极性Ingan量子井
机译:对核心壳LED的刻面IngaN生长调查
机译:外延生长,纳米制剂和InGaN微LED的传质,用于显示器
机译:NH3在InGaN / GaN多量子阱生长过程中的腐蚀作用研究
机译:研究InGaN面相关的非极性生长速率和核壳LED的组成