Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate

摘要

We demonstrate the possibility of fabrication of InGaN laser diode with an extremely thin lower AlGaN cladding (200 run) by using high electron concentration, plasmonic GaN substrate. The plasmonic substrates were fabricated by one of high-pressure methods - ammonothermal method or multi-feed-seed growth method and have an electron concentration from 5×10~(19) cm~(-3) up to 1×10~(20) cm~(-3). New plasmonic substrate devices, in spite of their extremely thin lower AlGaN cladding, showed identical properties to these manufactured with traditional, thick lower cladding design. They were characterized by identical threshold current density, slope efficiency and differential gain. Thin AlGaN devices are additionally characterized by low wafer bow and very low density of dislocations (＜10~4 cm~(-2)).