Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Sauletekio Ave. 9, Bld.3, Vilnius, LT-10222 Lithuania;
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Sauletekio Ave. 9, Bld.3, Vilnius, LT-10222 Lithuania;
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Sauletekio Ave. 9, Bld.3, Vilnius, LT-10222 Lithuania;
Department of Semiconductor Optoelectronics, Institute of Applied Research, Vilnius University, Sauletekio Ave. 9, Bld.3, Vilnius, LT-10222 Lithuania;
Kyma Technologies, Inc. 8829 Midway West Road, Raleigh, NC 27617, USA;
Kyma Technologies, Inc. 8829 Midway West Road, Raleigh, NC 27617, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University,Richmond, VA 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University,Richmond, VA 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University,Richmond, VA 23284, USA;
gallium nitride; two-photon carrier generation; diffusion; recombination; free carrier absorption; photoluminescence; transient gratings;
机译:时间分辨光致发光和慢正电子an灭技术研究极性和非极性GaN中室温非辐射性光致发光寿命的限制因素
机译:在氢化物气相外延生长的低缺陷密度极性和非极性独立式GaN衬底上的时间分辨光致发光,正电子ni灭和Al0.23Ga0.77N / GaN异质结构生长研究
机译:在氢化物气相外延生长的低缺陷密度极性和非极性独立式GaN衬底上的时间分辨光致发光,正电子ni灭和Al_0.23Ga_0.77N / GaN异质结构生长研究
机译:在半极性和非极性散装GaN基板上生长的IngaN LED结构的时间分辨光学研究
机译:GaN中点缺陷的时间分辨光致发光研究。
机译:共聚焦光致发光研究以识别基础堆叠缺陷在半极性InGaN / GaN发光二极管的光学特性中的作用
机译:用光致发光和四波混频技术研究高激发GaN中载流子复合和扩散的瞬变