Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan City, Taiwan 70101;
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan City, Taiwan 70101,Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan City, Taiwan 70101;
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan City, Taiwan 70101;
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan City, Taiwan 70101;
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan City, Taiwan 70101;
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan City, Taiwan 70101;
Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan City, Taiwan 70101,Department of Electro-Optical Engineering, Southern Taiwan University, Tainan, Taiwan 71005;
Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan City, Taiwan 70101,Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan City, Taiwan 70101;
InGaN; GaN; sapphire; photovoltaic; superlattice; buffer layer;
机译:量子限制对以InGaN / GaN超晶格为吸收层的InGaN基太阳能电池的电子和光学特性的影响
机译:具有多个InGaN / GaN超晶格堆叠以吸收更长的太阳光谱的纳米棒阵列的核-壳InGaN层的结构和光学研究
机译:InGaN / GaN超晶格吸收层对InGaN太阳能电池结构和光学性能的影响
机译:基于InGaN / Sapphire的光伏器件的特性,具有超晶格吸收层和缓冲层
机译:高效黄铜矿光伏器件的新型途径:替代缓冲层和碱处理吸收剂的光谱研究。
机译:双层MEH-PPV / TiO2光电器件的光电流-电压特性分析模型
机译:使用CD和Znte缓冲层与光伏器件中应用的ZnSNP2的结构和性能