A reflection layer for enhanced THz radiation from InAs thin films

摘要

A heavily-doped InAs layer was grown as a reflection layer for enhancing THz radiation. Si δ-doped and uniformly-doped structures were studied. The electron mobility of Si δ-doped InAs was higher than that of uniformly-doped one. The intensity from samples with the reflection layer was stronger than that from that without the reflection layer. This shows that THz radiation intensity from InAs thin films can be enhanced by the reflection layer.