Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy

摘要

We present a fast and robust optical method of determining carrier concentrations in heavily doped layered structures. We discuss several advantages of the technique as compared to other, more commonly applied methods using as an example InAs based devices used for THz radiation generation. Our approach leads to a more accurate estimation of doping levels in the investigated structures and aids the standard Hall measurements in precise predictions of radiative efficacy in the THz region. Predicted enhancement factors reproduce THz-Time Domain Spectroscopy (TDS) experiment results within a 2 % accuracy.