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Far Infrared Characterization of Single and Double Walled Carbon Nanotubes

机译:单壁和双壁碳纳米管的远红外表征

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摘要

High resolution far infrared absorption measurements were carried out for single walled and double walled carbon nanotubes samples (SWCNT and DWCNT) encased in a polyethylene matrix to investigate the temperature and bundling effects on the low frequency phonons associated with the low frequency circumferential vibrations. At a temperature where k_bT is significantly lower than the phonon energy, the broad absorption features as observed at room temperature become well resolved phonon transitions. For a DWCNT sample whose inner tubes have a similar diameter distribution as the SWCNT sample studied, a series of sharp features were observed at room temperature at similar positions as for the SWCNT samples studied. The narrow linewidth is attributed to the fact that the inner tubes are isolated from the polyethylene matrix and the weak inter-tubule interactions. More systematic studies will be required to better understand the effects of inhomogeneous broadening and thermal-excitation on the detailed position and lineshape of the low frequency phonon features in carbon nanotubes.
机译:对包裹在聚乙烯基体中的单壁和双壁碳纳米管样品(SWCNT和DWCNT)进行了高分辨率远红外吸收测量,以研究温度和成束效应对与低频圆周振动相关的低频声子的影响。在k_bT显着低于声子能量的温度下,在室温下观察到的宽吸收特征将成为分辨良好的声子跃迁。对于内管的直径分布与所研究的SWCNT样品相似的DWCNT样品,在室温下与所研究的SWCNT样品相似的位置处观察到一系列尖锐的特征。较窄的线宽归因于以下事实:内管与聚乙烯基质隔离,且管间相互作用较弱。需要进行更系统的研究,以更好地理解非均匀加宽和热激发对碳纳米管中低频声子特征的详细位置和线形的影响。

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  • 来源
  • 会议地点 Boston MA(US);Boston MA(US)
  • 作者单位

    Physical Measurement Laboratory, National Institute of Standard and Technology, Gaithersburg, MD20899;

    Physical Measurement Laboratory, National Institute of Standard and Technology, Gaithersburg, MD20899;

    Department of Physics, University of California and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA94720;

    Department of EECS and 4. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA02139;

    Department of EECS and 4. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA02139;

    Physical Measurement Laboratory, National Institute of Standard and Technology, Gaithersburg, MD20899;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体技术;
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