Correlation between Filament Distribution and Resistive Switching Property in Binary-Transition-Metal-Oxide Based Resistive Random Access Memory.

摘要

Large variation in basic memory properties is a serious issue that hinders the practical use of ReRAM. This study revealed that one of the main factors causing variation is the presence of multiple filaments which have distinct set voltages in each memory cell. An operating filament switches to another filament having the smallest set voltage at each instant of switching. We propose a resistive switching model that takes the presence of multiple filaments into consideration. A Monte Carlo simulation based on the resistive switching model reproduces the set voltage distribution. Improvement of accuracy of the simulation can be also expected considering the fact that V_(set) increases at a certain probability at each instant of set switching.