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New approach to the problem of determination of optical band gap ofcrystals with exponential absorption edge,

机译:确定具有指数吸收边的晶体的光学带隙问题的新方法,

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Abstract: The bandgap Eg is one of the main parameters of a semiconducting material, therefore development of precision methods of determination of Eg represents the important applied problem. Now this problem acquires the special significant due to extension of applications of semiconductive solid solutions, such as Hg$-2$MIN@x$/Cd$- x$/Te and others, because Eg depends on the chemical compositions of the solution and varies from a sample to another one. !14
机译:摘要:带隙Eg是半导体材料的主要参数之一,因此开发精确的Eg测定方法代表了重要的应用问题。现在由于扩展了半导体固溶体的应用(例如Hg $ -2 $ MIN @ x $ / Cd $ -x $ / Te等),该问题变得尤为重要,因为Eg取决于溶液的化学成分和从一个样本到另一个样本。 !14

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