Abstract: The temperature dependences of electrical conductivity $sigma@, Hall coefficient R$-H$/ and charge carrier mobility $mu$-H$/ for tin telluride with different degrees of deviation from stoichiometry have been obtained in the range of 4.2-300K. It has been shown that in bulk and thin film samples with charge carrier concentrations up to p$-H$/ $APEQ 8 $MUL 10 cm$+$MIN@3$/ there is observed earlier known ferroelectric phase transition accompanied by anomalous drop in $sigma and $mu$-H$/ in the vicinity of T $APEQ 100 K. On the other hand, as p$-H$/ grows, there appear temperature anomalies of transport coefficients in the range of 135-150 and 200-215 K. THese anomalies are attributed to the phase transitions connected with cation vacancies redistribution over the crystal lattice with changing temperature. It has been shown that realization of these processes is controlled by charge carrier concentration and kinetic factors. !23
展开▼
机译：摘要：对于不同化学计量比的碲化碲，电导率$ sigma @，霍尔系数R $ -H $ /和电荷载流子迁移率$ mu $ -H $ /的温度依赖性在4.2- 30万已经显示，在载流子浓度高达p $ -H $ / $ APEQ 8 $ MUL 10 cm $ + $ MIN @ 3 $ /的块状和薄膜样品中，观察到较早的已知铁电相变并伴有异常下降在T $ APEQ 100 K附近，在$ sigma和$ mu $ -H $ /中。另一方面，随着p $ -H $ /的增长，传输系数的温度异常出现在135-150和200-215K。这些异常归因于随着温度变化，与晶格上阳离子空位重新分布有关的相变。已经表明，这些过程的实现受载流子浓度和动力学因素控制。 ！23
展开▼
