Stress Analysis of Free-Standing Silicon Oxide Films Using Optical Interference

摘要

We report a method for stress measurement and analysis in silicon oxide thin films using optical interference. Effects of design and fabrication on stress have been studied by fabricating submicron-thick slabs of oxide anchored at one end and extending over a reflective surface. Optical interference occurs between reflections from the surface and the oxide slab, giving rise to light and dark fringes that may be imaged with a microscope. Analysis of the interference pattern at different wavelengths gives the radius of curvature and means of stress mapping. The accuracy exceeds non-interferometric profilometry using optical or confocal microscopes, and it can be more quantitative than scanning electron microscopy. This nondestructive profilometry method can aid the stress optimization of silicon oxide or other transparent thin films to achieve specific mechanical characteristics in MEMS devices.