ATOMIC LAYER DEPOSITION OF METAL OXIDE FILMS BY USING METAL ALKOXIDES AS AN OXYGEN SOURCE0

摘要

A new chemical approach for depositing metal oxide films by atomic layer deposition method is introduced. In this approach metal chlorides react with metal alkoxides so that no separate oxygen source is required. Because of avoiding strong oxidants in the growth process, no interfacial layer is formed between silicon and aluminum oxide during the growth process. Growth rates are higher than in the conventional metal chloride -water ALD processes. With this approach it is possible to deposit binary or ternary oxides depending on the choice of precursors. One remarkable result is the incorporation of silicon into the film when silicon alkoxides are used. The silicon incorporation can improve the interface characteristics in oxides grown on pure silica.