A BENCHMARK SOLUTION FOR MULTI-DIMENSIONAL THERMAL CVD MODELING WITH DETAILED CHEMISTRY

摘要

A benchmark solution is presented for 2-D simulations of of multi-component transport phenomena and multi-reaction chemistry in thermal CVD of silicon in a rotating disk/stagnation flow reactor. The results, which are validated against the 1-D SPIN code by Kee, Coltrin and coworkers, can be used as a benchmark against which (commercial) multi-dimensional CVD equipment simulation codes can be validated.