EUV Resists: What's Next?

摘要

The need to print smaller features and tighter pitches drives the development of new photolithography technologies. Extreme Ultraviolet Lithography (EUVL) at 13.5 nm wavelength is expected to provide considerable resolution gain over the current technology based on 193 nm wavelength. In this paper we assess the current status of EUV photoresists and their readiness for EUVL insertion into High Volume Manufacturing (HVM). In addition, we discuss the requirements that EUV photoresists will need to satisfy in the near and long term future.