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X-ray EUV UV and optical quantum efficiency measurements of laser-annealed ion-implanted CCDs

机译:激光退火离子注入CCD的X射线EUV紫外和光学量子效率测量

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Abstract: We report quantum efficiency measurements of back-illuminated, ion-implanted, laser-annealed charge coupled devices (CCDs) in the wavelength range 13 - 10,000 angstroms. The equivalent quantum efficiency (EQE $EQ equivalent photons detected per incident photon) range from a minimum of 5% at 1216 angstroms to a maximum of 87% at 135 angstroms. Using a simple relationship for the charge collection efficiency of the CCD pixels as a function of depth, we present a semi-empirical model with few parameters which reproduces our measurements with a fair degree of accuracy. The advantage of this model is that it can be used to predict CCD QE performance for shallow backside implanted devices without detailed solution of a system of differential equations, as in conventional approaches, and yields a simple analytic form for the charge collection efficiency which is adequate for detector calibration purposes.!23
机译:摘要:我们报告了在13-10,000埃波长范围内的背照式,离子注入,激光退火电荷耦合器件(CCD)的量子效率测量。等效量子效率(每个入射光子检测到的等效EQE $ EQ等效光子)的范围从1216埃的最小5%到135埃的最大87%的范围。使用一个简单的关系作为深度函数的CCD像素的电荷收集效率,我们提出了一个具有很少参数的半经验模型,该模型可以相当精确地再现我们的测量结果。该模型的优点在于,可以像常规方法一样,无需对微分方程组进行详细求解即可用于预测浅背面植入器件的CCD QE性能,并且可以得出电荷收集效率的简单分析形式,足以满足需要用于检测器校准!23

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