THE EFFECT OF LPCVD SILICON NITRIDE DEPOSITION ON THE SI-SIO_2 INTERFACE

摘要

The influences of Low Pressure Chemical Vapor Deposition of Silicon Nitride film on Si-SiO_2 interface in the nitride/oxide/Si stacks are investigated. Low Pressure Chemical Vapor Deposited nitride film contains a relative large amount of charges with obvious hysteresis effects, helping passivating underlying substrates. New defects are introduced into the Si-SiO_2 interface as nitride deposition happens, causing an increase of Si surface recombination velocity. After removal of nitride layer, thermal stability of the oxide stacks decrease comparing with those without initial nitride deposition and removal.