SILICON LAYERS ON SIC-ENCAPSULATED POROUS LOW-COST SUBSTRATES FOR THIN-FILM SOLAR CELLS

摘要

A SiC/silicon layer system, which is suitable for crystalline silicon thin-film solar cells, was deposited on low-cost porous substrates. Different types of substrates with a size of 10 cm × 10 cm were tested. The SiC barrier layers were grown by CVD at atmospheric pressure at a growth rate of about 0.5 μm/min. Due to the large thickness of the barrier layer of more than 10 μm, the layers are suitable to close open pores smaller than 3 μm on the substrate surface. Depending on growth conditions, different surface structures of the SiC-layers were observed. Some of these layers are structured by random-pyramids. As confirmed by simulations, the resulting Si/SiC interface is thus suitable as a backside reflector. The silicon layers on graphite substrates were successfully recrystallized by zone melting (ZMR).