NARROW BANDGAP TPV CONVERTERS OF RADIATION FROM THE EMITTERS HEATED BY CONCENTRATED SUNLIGHT

摘要

GaSb and GaAs/Ge based structures were developed and fabricated by LPE, MOCVD and Zn-diffusion techniques for thermophotovoltaic applications. Investigation of characteristics of cells in a conical system was carried out by a flash tester and under SiC and tungsten emitters heated by radiation from a high power xenon lamp in a concentrated sunlight simulator. Outdoor measurements of an array of three GaSb cells connected in parallel in a cylindrical system were carried out under illumination from tungsten emitters of different lengths. The maximum array in cylindrical system photocurrent of 3.5 A has been obtained at the tungsten emitter temperature of 1400 ℃.