INJECTION-AND TEMPERATURE-DEPENDENT SURFACE PHOTOVOLTAGE (SPV) MEASUREMENTS ON SILICON

摘要

We report on injection- and temperature-dependent surface photovoltage measurements on silicon. The possibilities and restrictions of the method are explored. An approximate solution for the evaluation of injection-dependent SPV measurements is proposed. Measurements on well-known defects show the feasibility of the SPV-method for lifetime spectroscopy. A first attempt for defect characterization in multicrystalline silicon was made.