EXCELLENT SURFACE PASSIVATION BY HYDROGENATED AMORPHOUS SILICON DEPOSITED AT RATES > 1 NM/S BY THE EXPANDING THERMAL PLASMA TECHNIQUE

摘要

Excellent surface passivation of crystalline silicon can be obtained by hydrogenated amorphous silicon (a-Si:H) films deposited by the expanding thermal plasma technique. These a-Si:H films can be deposited at significantly higher deposition temperatures (400 ℃) and deposition rates (>1 nm/s) compared to conventional rf-PECVD. Surface recombination velocities in the order of 7-15 cm/s can be obtained on low resistivity n-type c-Si.