InP based double heterojunction bipolar transistorwith carbon doped GaAsSb:C base grown byLP-MOVPE

摘要

We present the growth of highlycarbon doped GaAsSb on InP substrate withLP-MOVPE and nitrogen carrier gas. Carbondoped GaAsSb lattice matched on InP are ofpronounced interest for high speed doubleheterostructure bipolar transistors (DHBTs). Weobserved a significant effect of the nitrogen carriergas on the growth behaviour which results in lowerdistribution coefficients. A linear doping behaviourwith small CBr4 flows up to p=4 x 1019 cm-3 can beobserved and first realized DHBT structures shownfT and fmax values of 100 GHz and 60GHz,respectively.