A power amplifier based on the inverse Class F topology has been developed. The design has been done at 1 GHz with an LDMOS transistor as an active element. The PAE and the drain efficiency of the power amplifier are 73.8% and 77.8% respectively at an output power of 12.4W. This is to our knowledge the highest efficiency and output power for an LDMOS-based inverse Class F power amplifier working at 1 GHz.
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