HIGHLY EFFICIENT LDMOS POWER AMPLIFIER BASED ON CLASS-E TOPOLOGY

摘要

This paper describes a highly efficient class-E power amplifier. The design has been carried out at 1 GHz using a LDMOS transistor with 10 W of peak envelope power (PEP). Drain efficiency of 76,1%, power-added efficiency (PAE) of 73.6%, and gain of 14.8 dB are achieved at an output power of 39.1 dBm for a continuous wave (CW) signal.