Surface band structure studies of Si rich reconstructions on 4H-SiC(1100)

摘要

We have investigated Si-rich reconstructions of 4H-SiC(1100) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angle-resolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC(1100) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2x2) at T=800℃, c(2x4) at T=840℃. Both reconstructions show strong similarities in the electronic structure.