This paper describes the results of a demonstration of a new surface wave plasma abatement device operating in the microwave range (2.45 GHz) and initially aimed at destroying perfluorocompounds emitted from etch tools. The device was tested on a typical oxide etch recipe, containing CHF_3 and CF_4, on a commercial Applied Materials Centura 5200 MxP+ contact/via etcher. High abatement efficiency (>99.9percent) was achieved for both compounds, including CF_4, typically the most difficult PFC to destroy because of its high C-F covalent bond strength (112-116 kcal per mole).
展开▼
