State Key Laboratory of Electronic Thin Film and Integrated Devices, University of ElectronicScience and Technology, Chengdu 610054, China2Department of Microelectronic Engineering, Rochester Institute of Technology,;
State Key Laboratory of Electronic Thin Film and Integrated Devices, University of ElectronicScience and Technology, Chengdu 610054, China;
Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY USA;
Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY USA;
Phase-change memory; Chalcogenide; Phase transition;
机译:GeTe / SnTe和Ge_2Se_3 / SnTe硫族化物薄膜的相变研究
机译:由于SnTe堆叠中的非同构性,拓扑相变受到抑制
机译:拓扑晶体绝缘子SnTe(111)薄膜中与厚度和电场有关的拓扑相变的实验证据
机译:GeTe / SnTe和Ge_2Se_3 / SnTe硫族化物薄膜的相变研究
机译:过渡金属硫属化物薄膜磁性研究
机译:由于SnTe堆叠中的非同构性抑制了拓扑相变
机译:由于SNTE堆叠中的非对语引起的拓扑阶段转换
机译:Gete,snte,pbte,pbse和pbs的相对论带结构